Quartz Tube Semiconductor Grade Clear Fused Silica For Diffusion Furnace Wafer Process Vacuum Sealing Laboratory Custom Size
Detalhes do produto
| Densidade: | 2.2g/cm3 | Ponto de fusão: | 1750-1850 ℃ |
|---|---|---|---|
| Ponto de recozimento: | 1180 ℃ | Material: | SiO2> 99,99% |
| Ponto de deformação: | 1100°C | Dureza: | Morse 6.5 |
Descrição do produto
Destaques do produto
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